Parameters | |
---|---|
Published | 2006 |
JESD-609 Code | e3 |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Matte Tin (Sn) |
Voltage - Rated DC | 60V |
Technology | MOSFET (Metal Oxide) |
Terminal Form | WIRE |
Peak Reflow Temperature (Cel) | 260 |
Current Rating | 1.1A |
Time@Peak Reflow Temperature-Max (s) | 40 |
Pin Count | 3 |
JESD-30 Code | R-PSIP-W3 |
Number of Elements | 1 |
Number of Channels | 1 |
Power Dissipation-Max | 850mW Ta |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 850mW |
Turn On Delay Time | 8 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 330m Ω @ 3A, 10V |
Vgs(th) (Max) @ Id | 3V @ 1mA |
Input Capacitance (Ciss) (Max) @ Vds | 350pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 1.1A Ta |
Rise Time | 25ns |
Drive Voltage (Max Rds On,Min Rds On) | 5V 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 25 ns |
Turn-Off Delay Time | 30 ns |
Continuous Drain Current (ID) | 1.1A |
Gate to Source Voltage (Vgs) | 20V |
Drain-source On Resistance-Max | 0.45Ohm |
Drain to Source Breakdown Voltage | 60V |
Height | 4.01mm |
Length | 4.77mm |
Width | 2.41mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | RoHS Compliant |
Lead Free | Lead Free |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | E-Line-3 |
Weight | 453.59237mg |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |