ZVN4310A
| Parameters | |
|---|---|
| Number of Pins | 3 |
| Weight | 453.59237mg |
| Power Dissipation | 850mW |
| Turn On Delay Time | 8 ns |
| Transistor Element Material | SILICON |
| FET Type | N-Channel |
| Manufacturer Package Identifier | E-Line |
| Operating Temperature | -55°C~150°C TJ |
| Rds On (Max) @ Id, Vgs | 500m Ω @ 3A, 10V |
| Packaging | Bulk |
| Published | 1997 |
| Vgs(th) (Max) @ Id | 3V @ 1mA |
| JESD-609 Code | e3 |
| Input Capacitance (Ciss) (Max) @ Vds | 350pF @ 25V |
| Pbfree Code | no |
| Part Status | Active |
| Current - Continuous Drain (Id) @ 25°C | 900mA Ta |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Rise Time | 25ns |
| ECCN Code | EAR99 |
| Drive Voltage (Max Rds On,Min Rds On) | 5V 10V |
| Vgs (Max) | ±20V |
| Resistance | 500mOhm |
| Fall Time (Typ) | 25 ns |
| Terminal Finish | Matte Tin (Sn) |
| Turn-Off Delay Time | 30 ns |
| Continuous Drain Current (ID) | 900mA |
| Subcategory | FET General Purpose Power |
| Threshold Voltage | 3V |
| Voltage - Rated DC | 100V |
| Gate to Source Voltage (Vgs) | 20V |
| Technology | MOSFET (Metal Oxide) |
| Drain Current-Max (Abs) (ID) | 0.9A |
| Terminal Position | BOTTOM |
| Terminal Form | WIRE |
| Drain to Source Breakdown Voltage | 100V |
| Peak Reflow Temperature (Cel) | 260 |
| Max Junction Temperature (Tj) | 150°C |
| Current Rating | 900mA |
| Height | 6.51mm |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Length | 4.77mm |
| Width | 2.41mm |
| Pin Count | 3 |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| Number of Elements | 1 |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Number of Channels | 1 |
| Power Dissipation-Max | 850mW Ta |
| Element Configuration | Single |
| Factory Lead Time | 1 Week |
| Operating Mode | ENHANCEMENT MODE |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
See Relate Datesheet
