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ZVN4525E6TA

MOSFET N-CH 250V 230MA SOT-23-6


  • Manufacturer: Diodes Incorporated
  • Nocochips NO: 233-ZVN4525E6TA
  • Package: SOT-23-6
  • Datasheet: PDF
  • Stock: 388
  • Description: MOSFET N-CH 250V 230MA SOT-23-6 (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6
Number of Pins 6
Weight 14.996898mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Resistance 8.5Ohm
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Powers
Voltage - Rated DC 250V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 230mA
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 6
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1.1W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.1W
Turn On Delay Time 1.25 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 8.5 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 1.8V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 72pF @ 25V
Current - Continuous Drain (Id) @ 25°C 230mA Ta
Gate Charge (Qg) (Max) @ Vgs 3.65nC @ 10V
Rise Time 1.7ns
Drive Voltage (Max Rds On,Min Rds On) 2.4V 10V
Vgs (Max) ±40V
Fall Time (Typ) 1.7 ns
Turn-Off Delay Time 11.4 ns
Continuous Drain Current (ID) 230mA
Threshold Voltage 1.4V
Gate to Source Voltage (Vgs) 40V
Drain Current-Max (Abs) (ID) 0.23A
Drain to Source Breakdown Voltage 250V
Nominal Vgs 1.4 V
Height 1.3mm
Length 3.1mm
Width 1.8mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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