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ZVP1320FTA

P-Channel 200 V 80 Ohm Surface Mount Enhancement Mode Vertical DMOS FET-SOT-23


  • Manufacturer: Diodes Incorporated
  • Nocochips NO: 233-ZVP1320FTA
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: PDF
  • Stock: 707
  • Description: P-Channel 200 V 80 Ohm Surface Mount Enhancement Mode Vertical DMOS FET-SOT-23 (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 80Ohm
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC -200V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -35mA
Time@Peak Reflow Temperature-Max (s) 40
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 350mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 350mW
Turn On Delay Time 8 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 80 Ω @ 50mA, 10V
Vgs(th) (Max) @ Id 3.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 50pF @ 25V
Current - Continuous Drain (Id) @ 25°C 35mA Ta
Rise Time 8ns
Drain to Source Voltage (Vdss) 200V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 8 ns
Turn-Off Delay Time 8 ns
Continuous Drain Current (ID) 35mA
Threshold Voltage -1.5V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -200V
Feedback Cap-Max (Crss) 5 pF
Height 1.02mm
Length 3.04mm
Width 1.4mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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