Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-261-4, TO-261AA |
Number of Pins | 3 |
Weight | 7.994566mg |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2012 |
JESD-609 Code | e3 |
Pbfree Code | no |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 4 |
Termination | SMD/SMT |
ECCN Code | EAR99 |
Resistance | 5Ohm |
Terminal Finish | Matte Tin (Sn) |
Voltage - Rated DC | -60V |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 260 |
Current Rating | -450mA |
Time@Peak Reflow Temperature-Max (s) | 40 |
Pin Count | 4 |
JESD-30 Code | R-PDSO-G4 |
Number of Elements | 1 |
Number of Channels | 1 |
Power Dissipation-Max | 2W Ta |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 2W |
Case Connection | DRAIN |
Turn On Delay Time | 7 ns |
FET Type | P-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 5 Ω @ 500mA, 10V |
Vgs(th) (Max) @ Id | 3.5V @ 1mA |
Input Capacitance (Ciss) (Max) @ Vds | 100pF @ 18V |
Current - Continuous Drain (Id) @ 25°C | 450mA Ta |
Rise Time | 15ns |
Drain to Source Voltage (Vdss) | 60V |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 15 ns |
Turn-Off Delay Time | 12 ns |
Continuous Drain Current (ID) | 450mA |
Threshold Voltage | -3.5V |
Gate to Source Voltage (Vgs) | 20V |
Drain Current-Max (Abs) (ID) | 0.45A |
Drain to Source Breakdown Voltage | -60V |
Pulsed Drain Current-Max (IDM) | 4A |
Dual Supply Voltage | -60V |
Nominal Vgs | -3.5 V |
Height | 1.8mm |
Length | 6.7mm |
Width | 3.7mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |