Parameters | |
---|---|
Time@Peak Reflow Temperature-Max (s) | 40 |
Pin Count | 3 |
Reference Standard | CECC |
Number of Elements | 1 |
Number of Channels | 1 |
Power Dissipation-Max | 700mW Ta |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 700mW |
Factory Lead Time | 1 Week |
Turn On Delay Time | 7 ns |
Mount | Through Hole |
FET Type | P-Channel |
Mounting Type | Through Hole |
Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
Transistor Application | SWITCHING |
Number of Pins | 3 |
Weight | 453.59237mg |
Transistor Element Material | SILICON |
Rds On (Max) @ Id, Vgs | 8 Ω @ 375mA, 10V |
Operating Temperature | -55°C~150°C TJ |
Vgs(th) (Max) @ Id | 3.5V @ 1mA |
Input Capacitance (Ciss) (Max) @ Vds | 100pF @ 25V |
Packaging | Bulk |
Published | 2006 |
Current - Continuous Drain (Id) @ 25°C | 230mA Ta |
JESD-609 Code | e3 |
Rise Time | 15ns |
Pbfree Code | yes |
Drain to Source Voltage (Vdss) | 100V |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Number of Terminations | 3 |
Fall Time (Typ) | 15 ns |
ECCN Code | EAR99 |
Resistance | 8Ohm |
Turn-Off Delay Time | 12 ns |
Continuous Drain Current (ID) | 230mA |
Terminal Finish | Matte Tin (Sn) |
Threshold Voltage | -3.5V |
Gate to Source Voltage (Vgs) | 20V |
Subcategory | Other Transistors |
Drain to Source Breakdown Voltage | -100V |
Voltage - Rated DC | -100V |
Height | 4.01mm |
Technology | MOSFET (Metal Oxide) |
Length | 4.77mm |
Width | 2.41mm |
Terminal Position | BOTTOM |
Radiation Hardening | No |
Terminal Form | WIRE |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Peak Reflow Temperature (Cel) | 260 |
Lead Free | Lead Free |
Current Rating | -230mA |