Parameters | |
---|---|
Number of Pins | 3 |
Fall Time (Typ) | 8 ns |
Turn-Off Delay Time | 8 ns |
Continuous Drain Current (ID) | 160mA |
Weight | 453.59237mg |
Threshold Voltage | -3.5V |
Gate to Source Voltage (Vgs) | 20V |
Transistor Element Material | SILICON |
Drain to Source Breakdown Voltage | -60V |
Operating Temperature | -55°C~150°C TJ |
Feedback Cap-Max (Crss) | 8 pF |
Height | 450μm |
Packaging | Bulk |
Length | 1.6mm |
Width | 800μm |
Published | 2006 |
Radiation Hardening | No |
REACH SVHC | Yes |
RoHS Status | ROHS3 Compliant |
Tolerance | 1% |
JESD-609 Code | e3 |
Lead Free | Lead Free |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Resistance | 470kOhm |
Terminal Finish | Matte Tin (Sn) |
Voltage - Rated | 75V |
Subcategory | Other Transistors |
Power Rating | 100mW |
Voltage - Rated DC | -60V |
Technology | MOSFET (Metal Oxide) |
Terminal Position | BOTTOM |
Terminal Form | WIRE |
Peak Reflow Temperature (Cel) | 260 |
Current Rating | -160mA |
Time@Peak Reflow Temperature-Max (s) | 40 |
Pin Count | 3 |
Case Code (Metric) | 1608 |
Case Code (Imperial) | 0603 |
Number of Elements | 1 |
Number of Channels | 1 |
Power Dissipation-Max | 625mW Ta |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 625mW |
Turn On Delay Time | 8 ns |
FET Type | P-Channel |
Factory Lead Time | 1 Week |
Rds On (Max) @ Id, Vgs | 14 Ω @ 200mA, 10V |
Vgs(th) (Max) @ Id | 3.5V @ 1mA |
Mount | Surface Mount |
Input Capacitance (Ciss) (Max) @ Vds | 50pF @ 18V |
Mounting Type | Through Hole |
Current - Continuous Drain (Id) @ 25°C | 160mA Ta |
Rise Time | 8ns |
Drain to Source Voltage (Vdss) | 60V |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
Vgs (Max) | ±20V |