Parameters | |
---|---|
Pbfree Code | no |
Vgs (Max) | ±40V |
Part Status | Active |
Fall Time (Typ) | 3.78 ns |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Turn-Off Delay Time | 17.5 ns |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Continuous Drain Current (ID) | 205mA |
Resistance | 14Ohm |
Gate to Source Voltage (Vgs) | 40V |
Terminal Finish | Matte Tin (Sn) |
Drain Current-Max (Abs) (ID) | 0.205A |
Drain to Source Breakdown Voltage | -285V |
Subcategory | Other Transistors |
Height | 1.6mm |
Voltage - Rated DC | -250V |
Length | 4.6mm |
Width | 2.6mm |
Technology | MOSFET (Metal Oxide) |
Radiation Hardening | No |
Terminal Position | SINGLE |
REACH SVHC | No SVHC |
Terminal Form | FLAT |
RoHS Status | ROHS3 Compliant |
Peak Reflow Temperature (Cel) | 260 |
Lead Free | Lead Free |
Current Rating | -200mA |
Time@Peak Reflow Temperature-Max (s) | 40 |
Pin Count | 3 |
JESD-30 Code | R-PSSO-F3 |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Number of Channels | 1 |
Power Dissipation-Max | 1.2W Ta |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 1.2W |
Case Connection | DRAIN |
Turn On Delay Time | 1.53 ns |
FET Type | P-Channel |
Transistor Application | SWITCHING |
Factory Lead Time | 1 Week |
Rds On (Max) @ Id, Vgs | 14 Ω @ 200mA, 10V |
Mount | Surface Mount |
Vgs(th) (Max) @ Id | 2V @ 1mA |
Mounting Type | Surface Mount |
Input Capacitance (Ciss) (Max) @ Vds | 73pF @ 25V |
Package / Case | TO-243AA |
Current - Continuous Drain (Id) @ 25°C | 205mA Ta |
Number of Pins | 4 |
Weight | 130.492855mg |
Gate Charge (Qg) (Max) @ Vgs | 3.45nC @ 10V |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Rise Time | 3.78ns |
Packaging | Tape & Reel (TR) |
Drain to Source Voltage (Vdss) | 250V |
Published | 2001 |
JESD-609 Code | e3 |
Drive Voltage (Max Rds On,Min Rds On) | 3.5V 10V |