Parameters | |
---|---|
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) |
Number of Pins | 8 |
Weight | 139.989945mg |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2012 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 8 |
ECCN Code | EAR99 |
Resistance | 40mOhm |
Terminal Finish | Matte Tin (Sn) |
Additional Feature | LOW THRESHOLD |
Subcategory | FET General Purpose Power |
Voltage - Rated DC | 20V |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 260 |
Current Rating | 5.4A |
Time@Peak Reflow Temperature-Max (s) | 40 |
Pin Count | 8 |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Number of Channels | 1 |
Power Dissipation-Max | 1.1W Ta |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 1.8W |
Turn On Delay Time | 5.7 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 40m Ω @ 3.8A, 4.5V |
Vgs(th) (Max) @ Id | 700mV @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 1100pF @ 15V |
Current - Continuous Drain (Id) @ 25°C | 5.4A Ta |
Gate Charge (Qg) (Max) @ Vgs | 16nC @ 4.5V |
Rise Time | 9.6ns |
Drive Voltage (Max Rds On,Min Rds On) | 2.7V 4.5V |
Vgs (Max) | ±12V |
Fall Time (Typ) | 9.6 ns |
Turn-Off Delay Time | 28.3 ns |
Continuous Drain Current (ID) | 5.4A |
Gate to Source Voltage (Vgs) | 12V |
Drain to Source Breakdown Voltage | 20V |
Height | 950μm |
Length | 3.1mm |
Width | 3.1mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |