Parameters | |
---|---|
Pbfree Code | yes |
Vgs (Max) | ±20V |
Part Status | Active |
Fall Time (Typ) | 6.2 ns |
Turn-Off Delay Time | 40 ns |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Continuous Drain Current (ID) | 3.8A |
Number of Terminations | 8 |
Gate to Source Voltage (Vgs) | 20V |
ECCN Code | EAR99 |
Height | 950μm |
Resistance | 75mOhm |
Length | 3.1mm |
Terminal Finish | Matte Tin (Sn) |
Width | 3.1mm |
Additional Feature | LOW THRESHOLD |
Radiation Hardening | No |
Subcategory | Other Transistors |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Voltage - Rated DC | -30V |
Lead Free | Lead Free |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 260 |
Current Rating | -3.8A |
Time@Peak Reflow Temperature-Max (s) | 40 |
Pin Count | 8 |
Number of Elements | 1 |
Number of Channels | 1 |
Power Dissipation-Max | 1.1W Ta |
Factory Lead Time | 1 Week |
Element Configuration | Single |
Mount | Surface Mount |
Operating Mode | ENHANCEMENT MODE |
Mounting Type | Surface Mount |
Power Dissipation | 1.8W |
Turn On Delay Time | 4.4 ns |
Package / Case | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) |
FET Type | P-Channel |
Number of Pins | 8 |
Transistor Application | SWITCHING |
Weight | 139.989945mg |
Rds On (Max) @ Id, Vgs | 75m Ω @ 2.4A, 10V |
Transistor Element Material | SILICON |
Vgs(th) (Max) @ Id | 1V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 825pF @ 25V |
Operating Temperature | -55°C~150°C TJ |
Current - Continuous Drain (Id) @ 25°C | 3.8A Ta |
Packaging | Tape & Reel (TR) |
Gate Charge (Qg) (Max) @ Vgs | 46nC @ 10V |
Published | 2006 |
Rise Time | 6.2ns |
Drain to Source Voltage (Vdss) | 30V |
JESD-609 Code | e3 |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |