Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-243AA |
Number of Pins | 3 |
Weight | 130.492855mg |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2006 |
JESD-609 Code | e3 |
Pbfree Code | no |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Resistance | 700mOhm |
Terminal Finish | Matte Tin (Sn) |
Additional Feature | LOW THRESHOLD |
Subcategory | FET General Purpose Powers |
Voltage - Rated DC | 100V |
Technology | MOSFET (Metal Oxide) |
Terminal Form | FLAT |
Peak Reflow Temperature (Cel) | 260 |
Current Rating | 700mA |
Time@Peak Reflow Temperature-Max (s) | 40 |
Pin Count | 3 |
Number of Elements | 1 |
Number of Channels | 1 |
Power Dissipation-Max | 1.5W Ta |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 2.6W |
Case Connection | DRAIN |
Turn On Delay Time | 1.8 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 700m Ω @ 1.5A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 138pF @ 50V |
Current - Continuous Drain (Id) @ 25°C | 1A Ta |
Gate Charge (Qg) (Max) @ Vgs | 2.9nC @ 10V |
Rise Time | 1.5ns |
Drive Voltage (Max Rds On,Min Rds On) | 6V 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 2.1 ns |
Turn-Off Delay Time | 4.1 ns |
Continuous Drain Current (ID) | 1.4A |
Gate to Source Voltage (Vgs) | 20V |
Drain Current-Max (Abs) (ID) | 1A |
Drain to Source Breakdown Voltage | 100V |
Height | 1.6mm |
Length | 4.6mm |
Width | 2.6mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |