ZXMN10A11GTA
| Parameters | |
|---|---|
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 3.9W |
| Case Connection | DRAIN |
| Turn On Delay Time | 2.7 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 350m Ω @ 2.6A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 274pF @ 50V |
| Current - Continuous Drain (Id) @ 25°C | 1.7A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 5.4nC @ 10V |
| Rise Time | 1.7ns |
| Drive Voltage (Max Rds On,Min Rds On) | 6V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 3.5 ns |
| Turn-Off Delay Time | 7.4 ns |
| Continuous Drain Current (ID) | 2.4A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 100V |
| Height | 1.65mm |
| Mount | Surface Mount |
| Length | 6.7mm |
| Width | 3.7mm |
| Mounting Type | Surface Mount |
| Radiation Hardening | No |
| Package / Case | TO-261-4, TO-261AA |
| REACH SVHC | No SVHC |
| Weight | 7.994566mg |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2010 |
| JESD-609 Code | e3 |
| Pbfree Code | no |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Resistance | 350mOhm |
| Terminal Finish | Matte Tin (Sn) |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 100V |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 1A |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| JESD-30 Code | R-PDSO-G4 |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 2W Ta |
See Relate Datesheet
