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ZXMN10A25GTA

ZXMN10A25G Series N-Channel 100 V 0.125 Ohm Power MOSFET Surface Mount-SOT-223-3


  • Manufacturer: Diodes Incorporated
  • Nocochips NO: 233-ZXMN10A25GTA
  • Package: TO-261-4, TO-261AA
  • Datasheet: PDF
  • Stock: 751
  • Description: ZXMN10A25G Series N-Channel 100 V 0.125 Ohm Power MOSFET Surface Mount-SOT-223-3 (Kg)

Details

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Parameters
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 2W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.9W
Case Connection DRAIN
Turn On Delay Time 4.9 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 125m Ω @ 2.9A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 859pF @ 50V
Current - Continuous Drain (Id) @ 25°C 2.9A Ta
Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V
Rise Time 3.7ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 9.4 ns
Turn-Off Delay Time 18 ns
Continuous Drain Current (ID) 4A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 2.9A
Drain to Source Breakdown Voltage 100V
Height 1.65mm
Length 6.7mm
Width 3.7mm
Radiation Hardening No
REACH SVHC No SVHC
Factory Lead Time 1 Week
RoHS Status ROHS3 Compliant
Mount Surface Mount
Mounting Type Surface Mount
Lead Free Lead Free
Package / Case TO-261-4, TO-261AA
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Resistance 125mOhm
Terminal Finish Matte Tin (Sn)
Additional Feature FAST SWITCHING
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 4
JESD-30 Code R-PDSO-G4
See Relate Datesheet

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