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ZXMN15A27KTC

MOSFET ENHANCE MODE MOSFET 150V N-CHANNEL


  • Manufacturer: Diodes Incorporated
  • Nocochips NO: 233-ZXMN15A27KTC
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 348
  • Description: MOSFET ENHANCE MODE MOSFET 150V N-CHANNEL (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Weight 3.949996g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2009
JESD-609 Code e3
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 4
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 2.2W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 4.2W
Case Connection DRAIN
Turn On Delay Time 3.3 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 650m Ω @ 2.15A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 169pF @ 25V
Current - Continuous Drain (Id) @ 25°C 1.7A Ta
Gate Charge (Qg) (Max) @ Vgs 6.6nC @ 10V
Rise Time 12.7ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±25V
Fall Time (Typ) 13.3 ns
Turn-Off Delay Time 17.1 ns
Continuous Drain Current (ID) 1.7A
JEDEC-95 Code TO-252AA
Gate to Source Voltage (Vgs) 25V
Drain Current-Max (Abs) (ID) 2.55A
Drain-source On Resistance-Max 0.65Ohm
Drain to Source Breakdown Voltage 150V
Avalanche Energy Rating (Eas) 55 mJ
Height 2.39mm
Length 6.73mm
Width 6.22mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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