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ZXMN2A03E6TA

MOSFET N-CH 20V 3.6A SOT-23-6


  • Manufacturer: Diodes Incorporated
  • Nocochips NO: 233-ZXMN2A03E6TA
  • Package: SOT-23-6
  • Datasheet: PDF
  • Stock: 252
  • Description: MOSFET N-CH 20V 3.6A SOT-23-6 (Kg)

Details

Tags

Parameters
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6
Number of Pins 6
Weight 14.996898mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature LOW THRESHOLD
Subcategory FET General Purpose Power
Voltage - Rated DC 20V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 4.5A
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 6
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1.1W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.7W
Turn On Delay Time 4.7 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 55m Ω @ 7.2A, 4.5V
Vgs(th) (Max) @ Id 700mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 837pF @ 10V
Current - Continuous Drain (Id) @ 25°C 3.7A Ta
Gate Charge (Qg) (Max) @ Vgs 8.2nC @ 4.5V
Rise Time 5.7ns
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±12V
Fall Time (Typ) 5.7 ns
Turn-Off Delay Time 18.5 ns
Continuous Drain Current (ID) 4.6A
Gate to Source Voltage (Vgs) 12V
Drain Current-Max (Abs) (ID) 3.7A
Drain-source On Resistance-Max 0.055Ohm
Drain to Source Breakdown Voltage 20V
Height 1.3mm
Length 3.1mm
Width 1.8mm
Radiation Hardening No
See Relate Datesheet

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