Parameters | |
---|---|
Drive Voltage (Max Rds On,Min Rds On) | 2.5V 4.5V |
Vgs (Max) | ±12V |
Fall Time (Typ) | 4.2 ns |
Turn-Off Delay Time | 9.9 ns |
Continuous Drain Current (ID) | 4A |
Factory Lead Time | 1 Week |
Threshold Voltage | 800mV |
Mount | Surface Mount |
Gate to Source Voltage (Vgs) | 12V |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Number of Pins | 3 |
Drain Current-Max (Abs) (ID) | 4A |
Weight | 7.994566mg |
Drain to Source Breakdown Voltage | 20V |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Height | 1.02mm |
Packaging | Tape & Reel (TR) |
Published | 2008 |
JESD-609 Code | e3 |
Length | 3.04mm |
Pbfree Code | yes |
Part Status | Active |
Width | 1.4mm |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
Radiation Hardening | No |
ECCN Code | EAR99 |
Resistance | 60mOhm |
Terminal Finish | Matte Tin (Sn) |
REACH SVHC | No SVHC |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
RoHS Status | ROHS3 Compliant |
Terminal Position | DUAL |
Lead Free | Lead Free |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 260 |
Time@Peak Reflow Temperature-Max (s) | 40 |
Pin Count | 3 |
Number of Elements | 1 |
Number of Channels | 1 |
Power Dissipation-Max | 950mW Ta |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 1.4W |
Turn On Delay Time | 2.65 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 60m Ω @ 2.5A, 4.5V |
Vgs(th) (Max) @ Id | 1.5V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 277pF @ 10V |
Current - Continuous Drain (Id) @ 25°C | 3.4A Ta |
Gate Charge (Qg) (Max) @ Vgs | 2.8nC @ 4.5V |
Rise Time | 4.2ns |