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ZXMN2F34FHTA

MOSFET 20V N-Channel Enhance. Mode MOSFET


  • Manufacturer: Diodes Incorporated
  • Nocochips NO: 233-ZXMN2F34FHTA
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: PDF
  • Stock: 392
  • Description: MOSFET 20V N-Channel Enhance. Mode MOSFET (Kg)

Details

Tags

Parameters
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±12V
Fall Time (Typ) 4.2 ns
Turn-Off Delay Time 9.9 ns
Continuous Drain Current (ID) 4A
Factory Lead Time 1 Week
Threshold Voltage 800mV
Mount Surface Mount
Gate to Source Voltage (Vgs) 12V
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Drain Current-Max (Abs) (ID) 4A
Weight 7.994566mg
Drain to Source Breakdown Voltage 20V
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Height 1.02mm
Packaging Tape & Reel (TR)
Published 2008
JESD-609 Code e3
Length 3.04mm
Pbfree Code yes
Part Status Active
Width 1.4mm
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Radiation Hardening No
ECCN Code EAR99
Resistance 60mOhm
Terminal Finish Matte Tin (Sn)
REACH SVHC No SVHC
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
RoHS Status ROHS3 Compliant
Terminal Position DUAL
Lead Free Lead Free
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 950mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.4W
Turn On Delay Time 2.65 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 60m Ω @ 2.5A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 277pF @ 10V
Current - Continuous Drain (Id) @ 25°C 3.4A Ta
Gate Charge (Qg) (Max) @ Vgs 2.8nC @ 4.5V
Rise Time 4.2ns
See Relate Datesheet

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