Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Package / Case | TO-252-3 |
Number of Pins | 3 |
Weight | 3.949996g |
Packaging | Tape & Reel (TR) |
Published | 2006 |
JESD-609 Code | e3 |
Pbfree Code | no |
Part Status | Discontinued |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
ECCN Code | EAR99 |
Resistance | 20mOhm |
Terminal Finish | Matte Tin (Sn) |
Max Operating Temperature | 150°C |
Min Operating Temperature | -55°C |
Voltage - Rated DC | 30V |
Max Power Dissipation | 2.15W |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 260 |
Current Rating | 18.4A |
Time@Peak Reflow Temperature-Max (s) | 40 |
Pin Count | 3 |
JESD-30 Code | R-PSSO-G2 |
Number of Elements | 1 |
Number of Channels | 1 |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 4.3W |
Case Connection | DRAIN |
Turn On Delay Time | 5.2 ns |
Transistor Application | SWITCHING |
Rise Time | 6.1ns |
Drain to Source Voltage (Vdss) | 30V |
Polarity/Channel Type | N-CHANNEL |
Fall Time (Typ) | 20.2 ns |
Turn-Off Delay Time | 38.1 ns |
Continuous Drain Current (ID) | 18.4A |
Gate to Source Voltage (Vgs) | 20V |
Drain to Source Breakdown Voltage | 30V |
Pulsed Drain Current-Max (IDM) | 66A |
Input Capacitance | 1.89nF |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
Drain to Source Resistance | 30mOhm |
Rds On Max | 20 mΩ |
Height | 2.39mm |
Length | 6.73mm |
Width | 6.22mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |