Parameters | |
---|---|
Power Dissipation | 806mW |
Factory Lead Time | 1 Week |
Turn On Delay Time | 1.8 ns |
Contact Plating | Tin |
FET Type | N-Channel |
Mount | Surface Mount |
Transistor Application | SWITCHING |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Rds On (Max) @ Id, Vgs | 250m Ω @ 1.8A, 10V |
Number of Pins | 3 |
Vgs(th) (Max) @ Id | 3V @ 250μA |
Weight | 7.994566mg |
Input Capacitance (Ciss) (Max) @ Vds | 166pF @ 40V |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Current - Continuous Drain (Id) @ 25°C | 1.2A Ta |
Packaging | Tape & Reel (TR) |
Gate Charge (Qg) (Max) @ Vgs | 3.2nC @ 10V |
Published | 2002 |
Rise Time | 1.4ns |
JESD-609 Code | e3 |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Pbfree Code | yes |
Part Status | Active |
Vgs (Max) | ±20V |
Fall Time (Typ) | 1.4 ns |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Turn-Off Delay Time | 4.9 ns |
Number of Terminations | 3 |
Continuous Drain Current (ID) | 1.2A |
Termination | SMD/SMT |
Threshold Voltage | 3V |
Gate to Source Voltage (Vgs) | 20V |
ECCN Code | EAR99 |
Drain to Source Breakdown Voltage | 60V |
Resistance | 400mOhm |
Dual Supply Voltage | 60V |
Subcategory | FET General Purpose Powers |
Max Junction Temperature (Tj) | 150°C |
Nominal Vgs | 3 V |
Voltage - Rated DC | 60V |
Height | 1.1mm |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Length | 3.04mm |
Peak Reflow Temperature (Cel) | 260 |
Width | 1.4mm |
Current Rating | 1.2A |
Radiation Hardening | No |
Time@Peak Reflow Temperature-Max (s) | 40 |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Pin Count | 3 |
Lead Free | Lead Free |
Number of Elements | 1 |
Number of Channels | 1 |
Power Dissipation-Max | 625mW Ta |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |