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ZXMN6A08GTA

MOSFET N-CH 60V 3.8A SOT223


  • Manufacturer: Diodes Incorporated
  • Nocochips NO: 233-ZXMN6A08GTA
  • Package: TO-261-4, TO-261AA
  • Datasheet: PDF
  • Stock: 755
  • Description: MOSFET N-CH 60V 3.8A SOT223 (Kg)

Details

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Parameters
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Resistance 80mOhm
Terminal Finish Matte Tin (Sn)
Voltage - Rated DC 60V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 2.5A
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 4
JESD-30 Code R-PDSO-G4
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 2W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.9W
Case Connection DRAIN
Turn On Delay Time 2.6 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 80m Ω @ 4.8A, 10V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 459pF @ 40V
Current - Continuous Drain (Id) @ 25°C 3.8A Ta
Gate Charge (Qg) (Max) @ Vgs 5.8nC @ 10V
Rise Time 2.1ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 4.6 ns
Turn-Off Delay Time 12.3 ns
Factory Lead Time 1 Week
Continuous Drain Current (ID) 5.3A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 3.8A
Mount Surface Mount
Pulsed Drain Current-Max (IDM) 20A
Height 1.65mm
Length 6.7mm
Mounting Type Surface Mount
Width 3.7mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Package / Case TO-261-4, TO-261AA
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code no
Part Status Active
See Relate Datesheet

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