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ZXMN6A09KTC

MOSFET N-CH 60V 11.2A DPAK


  • Manufacturer: Diodes Incorporated
  • Nocochips NO: 233-ZXMN6A09KTC
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 574
  • Description: MOSFET N-CH 60V 11.2A DPAK (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Weight 3.949996g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code no
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Resistance 40mOhm
Terminal Finish Matte Tin (Sn)
Additional Feature LOW THRESHOLD
Subcategory FET General Purpose Powers
Voltage - Rated DC 60V
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 11.2A
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 2.15W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 10.1W
Case Connection DRAIN
Turn On Delay Time 4.8 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 40m Ω @ 7.3A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1426pF @ 30V
Current - Continuous Drain (Id) @ 25°C 7.7A Ta
Gate Charge (Qg) (Max) @ Vgs 29nC @ 10V
Rise Time 4.6ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 14.5 ns
Turn-Off Delay Time 32.5 ns
Continuous Drain Current (ID) 11.8A
JEDEC-95 Code TO-252AA
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 7.9A
Drain to Source Breakdown Voltage 60V
Height 2.39mm
Length 6.73mm
Width 6.22mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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