banner_page

ZXMN6A25GTA

MOSFET N-Chan 60V MOSFET (UMOS)


  • Manufacturer: Diodes Incorporated
  • Nocochips NO: 233-ZXMN6A25GTA
  • Package: TO-261-4, TO-261AA
  • Datasheet: PDF
  • Stock: 347
  • Description: MOSFET N-Chan 60V MOSFET (UMOS) (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Resistance 50mOhm
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 4
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 2W Ta
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.9W
Case Connection DRAIN
Turn On Delay Time 3.8 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 50m Ω @ 3.6A, 10V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1063pF @ 30V
Current - Continuous Drain (Id) @ 25°C 4.8A Ta
Gate Charge (Qg) (Max) @ Vgs 20.4nC @ 10V
Rise Time 4ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 10.6 ns
Turn-Off Delay Time 26.2 ns
Continuous Drain Current (ID) 6.7A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 60V
Pulsed Drain Current-Max (IDM) 28.5A
Height 1.65mm
Length 6.7mm
Width 3.7mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

Write a review

Note: HTML is not translated!
    Bad           Good