Parameters | |
---|---|
Factory Lead Time | 1 Week |
Contact Plating | Tin |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Number of Pins | 3 |
Weight | 3.949996g |
Transistor Element Material | SILICON |
Manufacturer Package Identifier | TO252 (DPAK) |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2006 |
JESD-609 Code | e3 |
Pbfree Code | no |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 4 |
ECCN Code | EAR99 |
Resistance | 235mOhm |
Additional Feature | FAST SWITCHING, LOW THRESHOLD |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 260 |
Time@Peak Reflow Temperature-Max (s) | 40 |
Pin Count | 4 |
JESD-30 Code | R-PDSO-G4 |
Number of Elements | 1 |
Number of Channels | 1 |
Power Dissipation-Max | 2.15W Ta |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 4.24W |
Turn On Delay Time | 4.3 ns |
FET Type | P-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 235m Ω @ 2.1A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 717pF @ 50V |
Current - Continuous Drain (Id) @ 25°C | 3A Ta |
Gate Charge (Qg) (Max) @ Vgs | 16.5nC @ 10V |
Rise Time | 5.2ns |
Drain to Source Voltage (Vdss) | 100V |
Drive Voltage (Max Rds On,Min Rds On) | 6V 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 12.1 ns |
Turn-Off Delay Time | 20 ns |
Continuous Drain Current (ID) | 4.6A |
Gate to Source Voltage (Vgs) | 20V |
Drain to Source Breakdown Voltage | -100V |
Max Junction Temperature (Tj) | 150°C |
Height | 2.52mm |
Length | 6.73mm |
Width | 6.22mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |