Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Number of Pins | 3 |
Weight | 3.949996g |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2002 |
JESD-609 Code | e3 |
Pbfree Code | no |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
ECCN Code | EAR99 |
Resistance | 85mOhm |
Terminal Finish | Matte Tin (Sn) |
Subcategory | Other Transistors |
Technology | MOSFET (Metal Oxide) |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 260 |
Time@Peak Reflow Temperature-Max (s) | 40 |
Pin Count | 3 |
JESD-30 Code | R-PSSO-G2 |
Number of Elements | 1 |
Number of Channels | 1 |
Power Dissipation-Max | 2.11W Ta |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 9.76W |
Case Connection | DRAIN |
Turn On Delay Time | 3.5 ns |
FET Type | P-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 85m Ω @ 2.9A, 10V |
Vgs(th) (Max) @ Id | 1V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 1021pF @ 30V |
Current - Continuous Drain (Id) @ 25°C | 5.4A Ta |
Gate Charge (Qg) (Max) @ Vgs | 24.2nC @ 10V |
Rise Time | 4.1ns |
Drain to Source Voltage (Vdss) | 60V |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 10 ns |
Turn-Off Delay Time | 35 ns |
Continuous Drain Current (ID) | 8.2A |
Threshold Voltage | -1V |
Gate to Source Voltage (Vgs) | 20V |
Drain Current-Max (Abs) (ID) | 5.4A |
Drain to Source Breakdown Voltage | -60V |
Pulsed Drain Current-Max (IDM) | 27.2A |
Height | 2.39mm |
Length | 6.73mm |
Width | 6.22mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |