Parameters | |
---|---|
ECCN Code | EAR99 |
JEDEC-95 Code | TO-252AA |
Resistance | 125mOhm |
Gate to Source Voltage (Vgs) | 20V |
Drain Current-Max (Abs) (ID) | 4.4A |
Terminal Finish | Matte Tin (Sn) |
Drain to Source Breakdown Voltage | -60V |
Subcategory | Other Transistors |
Height | 2.39mm |
Length | 6.73mm |
Technology | MOSFET (Metal Oxide) |
Width | 6.22mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
Terminal Form | GULL WING |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Peak Reflow Temperature (Cel) | 260 |
Time@Peak Reflow Temperature-Max (s) | 40 |
Pin Count | 4 |
JESD-30 Code | R-PSSO-G2 |
Number of Elements | 1 |
Number of Channels | 1 |
Power Dissipation-Max | 2.11W Ta |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 9.25W |
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Case Connection | DRAIN |
Turn On Delay Time | 2.6 ns |
Mounting Type | Surface Mount |
FET Type | P-Channel |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Transistor Application | SWITCHING |
Number of Pins | 3 |
Rds On (Max) @ Id, Vgs | 125m Ω @ 2.3A, 10V |
Weight | 3.949996g |
Vgs(th) (Max) @ Id | 1V @ 250μA |
Transistor Element Material | SILICON |
Input Capacitance (Ciss) (Max) @ Vds | 637pF @ 30V |
Operating Temperature | -55°C~150°C TJ |
Current - Continuous Drain (Id) @ 25°C | 4.4A Ta |
Packaging | Cut Tape (CT) |
Gate Charge (Qg) (Max) @ Vgs | 17.7nC @ 10V |
Published | 2009 |
Rise Time | 3.4ns |
JESD-609 Code | e3 |
Drain to Source Voltage (Vdss) | 60V |
Pbfree Code | no |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Part Status | Active |
Vgs (Max) | ±20V |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Fall Time (Typ) | 11.3 ns |
Number of Terminations | 2 |
Turn-Off Delay Time | 26.2 ns |
Continuous Drain Current (ID) | 6.6A |