banner_page

ZXMP6A18KTC

MOSFET P-CH 60V 6.8A DPAK


  • Manufacturer: Diodes Incorporated
  • Nocochips NO: 233-ZXMP6A18KTC
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 586
  • Description: MOSFET P-CH 60V 6.8A DPAK (Kg)

Details

Tags

Parameters
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Weight 3.949996g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Resistance 55mOhm
Terminal Finish Matte Tin (Sn)
Additional Feature LOW THRESHOLD; FAST SWITCHING
Subcategory Other Transistors
Voltage - Rated DC -60V
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -10.4A
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 2.15W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 10.1W
Case Connection DRAIN
Turn On Delay Time 4.6 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 55m Ω @ 3.5A, 10V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1580pF @ 30V
Current - Continuous Drain (Id) @ 25°C 6.8A Ta
Gate Charge (Qg) (Max) @ Vgs 44nC @ 10V
Rise Time 5.8ns
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 23 ns
Turn-Off Delay Time 55 ns
Continuous Drain Current (ID) 10.4A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -60V
Height 2.39mm
Length 6.73mm
Width 6.22mm
Radiation Hardening No
REACH SVHC No SVHC
See Relate Datesheet

Write a review

Note: HTML is not translated!
    Bad           Good