Parameters | |
---|---|
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | 8-VDFN Exposed Pad |
Number of Pins | 832 |
Diode Element Material | SILICON |
Packaging | Cut Tape (CT) |
Published | 2003 |
JESD-609 Code | e3 |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 10 |
Terminal Finish | MATTE TIN |
Max Operating Temperature | 125°C |
Min Operating Temperature | -55°C |
HTS Code | 8541.10.00.80 |
Voltage - Rated DC | 60V |
Terminal Position | QUAD |
Terminal Form | FLAT |
Peak Reflow Temperature (Cel) | 260 |
Reach Compliance Code | unknown |
Current Rating | 1.65A |
Time@Peak Reflow Temperature-Max (s) | 40 |
Base Part Number | ZXSDS2M832 |
Pin Count | 10 |
JESD-30 Code | R-PQFP-F10 |
Qualification Status | Not Qualified |
Number of Elements | 2 |
Power Dissipation-Max | 0.8W |
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Diode Type | Schottky |
Current - Reverse Leakage @ Vr | 100μA @ 45V |
Voltage - Forward (Vf) (Max) @ If | 600mV @ 1A |
Forward Current | 1.24A |
Operating Temperature - Junction | -55°C~125°C |
Application | EFFICIENCY |
Current - Average Rectified (Io) | 1.65A DC |
Forward Voltage | 740mV |
Max Reverse Voltage (DC) | 60V |
Average Rectified Current | 1.65A |
Number of Phases | 1 |
Reverse Recovery Time | 12 ns |
Peak Reverse Current | 100μA |
Max Repetitive Reverse Voltage (Vrrm) | 60V |
Peak Non-Repetitive Surge Current | 16.8A |
Diode Configuration | 2 Independent |
Max Forward Surge Current (Ifsm) | 16.8A |
Height | 1mm |
Length | 3mm |
Width | 2mm |
RoHS Status | RoHS Compliant |
Lead Free | Lead Free |