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ZXT11N20DFTA

ZXT11N20DFTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi


  • Manufacturer: Diodes Incorporated
  • Nocochips NO: 233-ZXT11N20DFTA
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: PDF
  • Stock: 516
  • Description: ZXT11N20DFTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi (Kg)

Details

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Parameters
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC 20V
Max Power Dissipation 625mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 2.5A
Frequency 160MHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number ZXT11N20D
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 806mW
Transistor Application SWITCHING
Gain Bandwidth Product 160MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 20V
Max Collector Current 2.5A
DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 100mA 2V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 130mV @ 250mA, 2.5A
Collector Emitter Breakdown Voltage 20V
Transition Frequency 160MHz
Collector Emitter Saturation Voltage 90mV
Max Breakdown Voltage 20V
Collector Base Voltage (VCBO) 40V
Emitter Base Voltage (VEBO) 7.5V
Continuous Collector Current 2.5A
Height 1mm
Length 3.05mm
Width 1.4mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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