Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) |
Number of Pins | 8 |
Weight | 139.989945mg |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2006 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 8 |
ECCN Code | EAR99 |
Terminal Finish | Matte Tin (Sn) |
Subcategory | Other Transistors |
Voltage - Rated DC | 50V |
Max Power Dissipation | 1.25W |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 260 |
Current Rating | 3A |
Frequency | 132MHz |
Time@Peak Reflow Temperature-Max (s) | 40 |
Base Part Number | ZXT12N50D |
Pin Count | 8 |
Number of Elements | 2 |
Polarity | NPN |
Element Configuration | Dual |
Power Dissipation | 1.25W |
Power - Max | 1.04W |
Transistor Application | SWITCHING |
Gain Bandwidth Product | 132MHz |
Transistor Type | 2 NPN (Dual) |
Collector Emitter Voltage (VCEO) | 50V |
Max Collector Current | 3A |
DC Current Gain (hFE) (Min) @ Ic, Vce | 300 @ 1A 2V |
Current - Collector Cutoff (Max) | 100nA |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 50mA, 3A |
Collector Emitter Breakdown Voltage | 50V |
Transition Frequency | 132MHz |
Collector Emitter Saturation Voltage | 135mV |
Max Breakdown Voltage | 50V |
Collector Base Voltage (VCBO) | 100V |
Emitter Base Voltage (VEBO) | 7.5V |
Continuous Collector Current | 3A |
Height | 950μm |
Length | 3.1mm |
Width | 3.1mm |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |