Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | 8-WDFN Exposed Pad |
Number of Pins | 8 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2011 |
JESD-609 Code | e4 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 8 |
ECCN Code | EAR99 |
Terminal Finish | Nickel/Palladium/Gold (Ni/Pd/Au) |
Additional Feature | HIGH RELIABILITY |
Subcategory | BIP General Purpose Small Signal |
Max Power Dissipation | 1.7W |
Peak Reflow Temperature (Cel) | 260 |
Frequency | 165MHz |
Time@Peak Reflow Temperature-Max (s) | 40 |
Base Part Number | ZXTC6719MC |
Pin Count | 8 |
Number of Elements | 2 |
Polarity | NPN, PNP |
Element Configuration | Dual |
Power Dissipation | 2.45W |
Case Connection | COLLECTOR |
Transistor Application | SWITCHING |
Gain Bandwidth Product | 165MHz |
Transistor Type | NPN, PNP |
Collector Emitter Voltage (VCEO) | 320mV |
Max Collector Current | 3A |
DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 2A 2V / 60 @ 1.5A 2V |
Current - Collector Cutoff (Max) | 100nA |
Vce Saturation (Max) @ Ib, Ic | 320mV @ 200mA, 4A / 370mV @ 250mA, 2.5A |
Collector Emitter Breakdown Voltage | 40V |
Voltage - Collector Emitter Breakdown (Max) | 50V 40V |
Current - Collector (Ic) (Max) | 4A 3A |
Transition Frequency | 165MHz |
Collector Emitter Saturation Voltage | 10mV |
Max Breakdown Voltage | 40V |
Frequency - Transition | 165MHz 190MHz |
Collector Base Voltage (VCBO) | 100V |
Emitter Base Voltage (VEBO) | 7V |
Continuous Collector Current | 4A |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |