ZXTD09N50DE6TA
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | SOT-23-6 |
| Number of Pins | 6 |
| Weight | 14.996898mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2011 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 50V |
| Max Power Dissipation | 1.7W |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 2A |
| Frequency | 215MHz |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | ZXTD09N50D |
| Pin Count | 6 |
| Number of Elements | 2 |
| Polarity | NPN |
| Element Configuration | Dual |
| Power Dissipation | 1.7W |
| Power - Max | 1.1W |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 215MHz |
| Transistor Type | 2 NPN (Dual) |
| Collector Emitter Voltage (VCEO) | 50V |
| Max Collector Current | 1A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 500mA 2V |
| Current - Collector Cutoff (Max) | 10nA |
| Vce Saturation (Max) @ Ib, Ic | 270mV @ 50mA, 1A |
| Collector Emitter Breakdown Voltage | 50V |
| Transition Frequency | 215MHz |
| Collector Emitter Saturation Voltage | 160mV |
| Max Breakdown Voltage | 50V |
| Collector Base Voltage (VCBO) | 50V |
| Emitter Base Voltage (VEBO) | 5V |
| Continuous Collector Current | 1A |
| Height | 1.3mm |
| Length | 3.1mm |
| Width | 1.8mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
