Parameters | |
---|---|
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | 8-VDFN Exposed Pad |
Number of Pins | 832 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2006 |
JESD-609 Code | e3 |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 10 |
ECCN Code | EAR99 |
Terminal Finish | Matte Tin (Sn) |
Subcategory | Other Transistors |
Voltage - Rated DC | -12V |
Max Power Dissipation | 1.7W |
Terminal Position | QUAD |
Terminal Form | FLAT |
Peak Reflow Temperature (Cel) | 260 |
Current Rating | -4A |
Frequency | 110MHz |
Time@Peak Reflow Temperature-Max (s) | 40 |
Base Part Number | ZXTD1M832 |
Pin Count | 10 |
JESD-30 Code | R-PQFP-F10 |
Qualification Status | Not Qualified |
Number of Elements | 2 |
Polarity | PNP |
Element Configuration | Dual |
Power Dissipation | 3W |
Case Connection | COLLECTOR |
Power - Max | 1.7W |
Transistor Application | SWITCHING |
Gain Bandwidth Product | 110MHz |
Transistor Type | 2 PNP (Dual) |
Collector Emitter Voltage (VCEO) | 300mV |
Max Collector Current | 4A |
DC Current Gain (hFE) (Min) @ Ic, Vce | 180 @ 2.5A 2V |
Current - Collector Cutoff (Max) | 25nA |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 150mA, 4A |
Collector Emitter Breakdown Voltage | 12V |
Transition Frequency | 110MHz |
Collector Emitter Saturation Voltage | -240mV |
Max Breakdown Voltage | 12V |
Collector Base Voltage (VCBO) | -20V |
Emitter Base Voltage (VEBO) | 7.5V |
Continuous Collector Current | -4A |
Height | 1mm |
Length | 3mm |
Width | 2mm |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |