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ZXTD4591E6TA

DIODES INC. - ZXTD4591E6TA - Bipolar Transistor Array, Dual, NPN, PNP, 60 V, 1.1 W, 1 A, 100 hFE, SOT-23


  • Manufacturer: Diodes Incorporated
  • Nocochips NO: 233-ZXTD4591E6TA
  • Package: SOT-23-6
  • Datasheet: PDF
  • Stock: 942
  • Description: DIODES INC. - ZXTD4591E6TA - Bipolar Transistor Array, Dual, NPN, PNP, 60 V, 1.1 W, 1 A, 100 hFE, SOT-23 (Kg)

Details

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Parameters
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6
Number of Pins 6
Weight 14.996898mg
Transistor Element Material SILICON
Manufacturer Package Identifier SOT26 (SC74R)
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Max Power Dissipation 1.7W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 1A
Frequency 150MHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number ZXTD4591
Number of Elements 2
Polarity NPN, PNP
Element Configuration Dual
Power Dissipation 1.1W
Transistor Application SWITCHING
Gain Bandwidth Product 150MHz
Transistor Type NPN, PNP
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 500mA 5V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 600mV @ 100mA, 1A / 500mV @ 100mA, 1A
Collector Emitter Breakdown Voltage 60V
Transition Frequency 150MHz
Collector Emitter Saturation Voltage 600mV
Max Breakdown Voltage 60V
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 5V
hFE Min 100
Max Junction Temperature (Tj) 150°C
Height 1.4mm
Length 3mm
Width 1.75mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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