banner_page

ZXTD619MCTA

Trans GP BJT NPN 50V 4A 8-Pin DFN EP T/R


  • Manufacturer: Diodes Incorporated
  • Nocochips NO: 233-ZXTD619MCTA
  • Package: 8-VDFN Exposed Pad
  • Datasheet: PDF
  • Stock: 892
  • Description: Trans GP BJT NPN 50V 4A 8-Pin DFN EP T/R (Kg)

Details

Tags

Parameters
Additional Feature HIGH RELIABILITY
Subcategory Other Transistors
Max Power Dissipation 2.45W
Peak Reflow Temperature (Cel) 260
Frequency 165MHz
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 8
Number of Elements 2
Polarity NPN
Element Configuration Dual
Power Dissipation 2.45W
Case Connection COLLECTOR
Power - Max 1.7W
Transistor Application SWITCHING
Gain Bandwidth Product 165MHz
Transistor Type 2 NPN (Dual)
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 4A
DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 200mA 2V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 320mV @ 200mA, 4A
Collector Emitter Breakdown Voltage 50V
Transition Frequency 165MHz
Collector Emitter Saturation Voltage 270mV
Max Breakdown Voltage 50V
Frequency - Transition 100MHz
Collector Base Voltage (VCBO) 100V
Emitter Base Voltage (VEBO) 7V
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-VDFN Exposed Pad
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
JESD-609 Code e4
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
See Relate Datesheet

Write a review

Note: HTML is not translated!
    Bad           Good