ZXTD718MCTA
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-VDFN Exposed Pad |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2011 |
| JESD-609 Code | e4 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Terminal Finish | Nickel/Palladium/Gold (Ni/Pd/Au) |
| Subcategory | Other Transistors |
| Max Power Dissipation | 2.45W |
| Peak Reflow Temperature (Cel) | 260 |
| Frequency | 180MHz |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Pin Count | 8 |
| Number of Elements | 2 |
| Polarity | PNP |
| Element Configuration | Dual |
| Power Dissipation | 2.45W |
| Power - Max | 1.7W |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 180MHz |
| Transistor Type | 2 PNP (Dual) |
| Collector Emitter Voltage (VCEO) | 20V |
| Max Collector Current | 3.5A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 300 @ 100mA 2V |
| Current - Collector Cutoff (Max) | 100nA |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 350mA, 3.5A |
| Collector Emitter Breakdown Voltage | 20V |
| Transition Frequency | 180MHz |
| Collector Emitter Saturation Voltage | -19mV |
| Max Breakdown Voltage | 20V |
| Frequency - Transition | 150MHz |
| Collector Base Voltage (VCBO) | 25V |
| Emitter Base Voltage (VEBO) | -7V |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet
