ZXTDA1M832TA
| Parameters | |
|---|---|
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-VDFN Exposed Pad |
| Number of Pins | 832 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2002 |
| JESD-609 Code | e3 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 10 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Subcategory | BIP General Purpose Small Signal |
| Max Power Dissipation | 1W |
| Terminal Position | QUAD |
| Terminal Form | FLAT |
| Peak Reflow Temperature (Cel) | 260 |
| Frequency | 120MHz |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | ZXTDA1M832 |
| Pin Count | 10 |
| JESD-30 Code | R-PQFP-F10 |
| Qualification Status | Not Qualified |
| Number of Elements | 2 |
| Polarity | NPN, PNP |
| Element Configuration | Dual |
| Power Dissipation | 3W |
| Case Connection | COLLECTOR |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 120MHz |
| Transistor Type | NPN, PNP |
| Collector Emitter Voltage (VCEO) | 280mV |
| Max Collector Current | 4A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 3A 2V / 180 @ 2.5A 2V |
| Current - Collector Cutoff (Max) | 25nA |
| Vce Saturation (Max) @ Ib, Ic | 280mV @ 50mA, 4.5A / 300mV @ 150mA, 4A |
| Collector Emitter Breakdown Voltage | 12V |
| Voltage - Collector Emitter Breakdown (Max) | 15V 12V |
| Current - Collector (Ic) (Max) | 4.5A 4A |
| Transition Frequency | 120MHz |
| Collector Emitter Saturation Voltage | 240mV |
| Max Breakdown Voltage | 12V |
| Frequency - Transition | 120MHz 110MHz |
| Collector Base Voltage (VCBO) | 20V |
| Emitter Base Voltage (VEBO) | 7.5V |
| Continuous Collector Current | -4A |
| Height | 1mm |
| Length | 3mm |
| Width | 2mm |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet
