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ZXTN2010GTA

ZXTN2010GTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi


  • Manufacturer: Diodes Incorporated
  • Nocochips NO: 233-ZXTN2010GTA
  • Package: TO-261-4, TO-261AA
  • Datasheet: PDF
  • Stock: 537
  • Description: ZXTN2010GTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Voltage - Rated DC 60V
Max Power Dissipation 3W
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 6A
Frequency 130MHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number ZXTN2010
Pin Count 4
Number of Elements 1
Element Configuration Single
Power Dissipation 1.6W
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product 130MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 6A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 2A 1V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 260mV @ 300mA, 6A
Collector Emitter Breakdown Voltage 190V
Transition Frequency 130MHz
Collector Emitter Saturation Voltage 210mV
Max Breakdown Voltage 60V
Collector Base Voltage (VCBO) 150V
Emitter Base Voltage (VEBO) 7V
hFE Min 20
Max Junction Temperature (Tj) 150°C
Continuous Collector Current 6A
Height 1.8mm
Length 6.7mm
Width 3.7mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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