ZXTN2010ZTA
| Parameters | |
|---|---|
| Collector Base Voltage (VCBO) | 150V |
| Emitter Base Voltage (VEBO) | 7V |
| hFE Min | 20 |
| Max Junction Temperature (Tj) | 150°C |
| Continuous Collector Current | 5A |
| Height | 1.6mm |
| Length | 4.6mm |
| Width | 2.6mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 1 Week |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-243AA |
| Number of Pins | 4 |
| Weight | 51.993025mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2006 |
| JESD-609 Code | e3 |
| Pbfree Code | no |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 60V |
| Max Power Dissipation | 2.1W |
| Terminal Form | FLAT |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 5A |
| Frequency | 130MHz |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | ZXTN2010 |
| Pin Count | 3 |
| JESD-30 Code | R-PSSO-F3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 1.5W |
| Case Connection | COLLECTOR |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 130MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 60V |
| Max Collector Current | 5A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 2A 1V |
| Current - Collector Cutoff (Max) | 50nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 230mV @ 300mA, 6A |
| Collector Emitter Breakdown Voltage | 80V |
| Transition Frequency | 130MHz |
| Collector Emitter Saturation Voltage | 170mV |
| Max Breakdown Voltage | 60V |
See Relate Datesheet
