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ZXTN25012EZTA

ZXTN25012EZTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi


  • Manufacturer: Diodes Incorporated
  • Nocochips NO: 233-ZXTN25012EZTA
  • Package: TO-243AA
  • Datasheet: PDF
  • Stock: 422
  • Description: ZXTN25012EZTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi (Kg)

Details

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Parameters
Max Collector Current 6.5A
DC Current Gain (hFE) (Min) @ Ic, Vce 500 @ 10mA 2V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 270mV @ 130mA, 6.5A
Collector Emitter Breakdown Voltage 12V
Transition Frequency 260MHz
Collector Emitter Saturation Voltage 38mV
Max Breakdown Voltage 12V
Collector Base Voltage (VCBO) 20V
Emitter Base Voltage (VEBO) 7V
Continuous Collector Current 6.5A
Height 1.6mm
Length 4.6mm
Width 2.6mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Number of Pins 4
Weight 130.492855mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation 4.46W
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Frequency 260MHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number ZXTN25012E
Pin Count 3
JESD-30 Code R-PSSO-F3
Number of Elements 1
Element Configuration Single
Power Dissipation 4.46W
Case Connection COLLECTOR
Power - Max 2.4W
Transistor Application SWITCHING
Gain Bandwidth Product 260MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 12V
See Relate Datesheet

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