ZXTN25100DGTA
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-261-4, TO-261AA |
| Number of Pins | 4 |
| Weight | 7.994566mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2007 |
| JESD-609 Code | e3 |
| Pbfree Code | no |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Subcategory | Other Transistors |
| Max Power Dissipation | 5.3W |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Frequency | 175MHz |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | ZXTN25100D |
| Pin Count | 4 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 1.2W |
| Case Connection | COLLECTOR |
| Power - Max | 3W |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 175MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 100V |
| Max Collector Current | 3A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 300 @ 10mA 2V |
| Current - Collector Cutoff (Max) | 50nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 600mA, 3A |
| Collector Emitter Breakdown Voltage | 130V |
| Transition Frequency | 175MHz |
| Collector Emitter Saturation Voltage | 200mV |
| Max Breakdown Voltage | 100V |
| Collector Base Voltage (VCBO) | 180V |
| Emitter Base Voltage (VEBO) | 7V |
| hFE Min | 300 |
| Max Junction Temperature (Tj) | 150°C |
| Height | 1.8mm |
| Length | 6.7mm |
| Width | 3.7mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
